Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same

ABSTRACT

A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

RELATED APPLICATION

The present invention is based on, and claims priority from, KoreanApplication Number 2005-0005138, filed Jan. 19, 2005, the disclosure ofwhich is incorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a gallium nitride-based lightemitting device and a method for manufacturing the same, and, moreparticularly, to a gallium nitride-based light emitting device, designedto have enhanced tolerance to reverse electrostatic discharge (ESD), anda method for manufacturing the same.

2. Description of the Related Art

Generally, a conventional gallium nitride-based light emitting devicecomprises a buffer layer, an n-type GaN-based clad layer, an activelayer, and a p-type GaN-based clad layer sequentially stacked on adielectric sapphire substrate in this order. Additionally, a transparentelectrode and a p-side electrode are sequentially formed on the p-typeGaN-based clad layer, and an n-side electrode is formed on a portion ofthe n-type GaN-based clad layer exposed by mesa etching. In such aconventional gallium nitride-based light emitting device, holes from thep-side electrode and electrons from the n-side electrode are coupled toemit light corresponding to energy band gap of a composition of theactive layer.

Although the gallium nitride-based light emitting device has asignificantly large energy band gap, it is vulnerable to electrostaticdischarge due to its negative crystallinity. In particular, as theamount of crystal defects is increased, the light emitting device ismore vulnerable to the electrostatic discharge. Specifically, thegallium nitride-based light emitting device based on a material havingthe formula Al_(x)Ga_(y)In_(1-x-y)N (0≦x≦1, 0≦y≦1) has a tolerancevoltage of about 1 to 3 kV against forward ESD, and a tolerance voltageof about 100 V to 1 kV against reverse ESD. As such, the galliumnitride-based light emitting device is more vulnerable to the reverseESD rather than the forward ESD. Thus, when a large reverse ESD voltageis applied in a pulse shape to the gallium nitride-based light emittingdevice, the light emitting device is deteriorated or damaged. Forexample, when the light emitting device is brought into contact with aperson's body, or inserted into or drawn from a socket, a reverse ESDvoltage of 10 kV or more is applied to the gallium nitride-based lightemitting device. As a result, such a reverse ESD phenomenon damagesreliability of the gallium nitride-based light emitting device as wellas causing a sharp reduction in life span thereof.

In order to solve the above mentioned problem, several approaches forenhancing the tolerance voltage of the gallium nitride-based lightemitting device against ESD have been proposed. For example, there is amethod of enhancing the tolerance voltage of the light emitting deviceto ESD by optimizing the structure of the light emitting device, andprocess of manufacturing the same. However, with this method, there is alimitation in achieving desired tolerance to ESD. As another method, alight emitting diode (which will be referred to hereinafter as “LED”) offlip-chip structure is connected in parallel to a Si-based Zener diodeso as to protect the light emitting device from ESD. However, in thismethod, an additional Zener diode must be purchased, and then assembledthereto by bonding, thereby significantly increasing material costs andmanufacturing costs as well as restricting miniaturization of thedevice. As yet another method, U.S. Pat. No. 6,593,597 disclosestechnology for protecting the light emitting device from ESD byintegrating an LED and a Schottky diode on an identical substrate andconnecting them in parallel.

FIG. 1 a is a cross-sectional view illustrating a conventional galliumnitride-based light emitting device having a Schottky diode connected inparallel as described above, and FIG. 1 b is an equivalent circuitdiagram of FIG. 1 a. Referring to FIG. 1 a, an LED structure of theconventional light emitting device comprises a first nucleus generationlayer 102 a, a first conductive buffer layer 104 a, a lower confinementlayer 106, an active layer 108, an upper confinement layer 110, acontact layer 112, a transparent electrode 114, and an n-side electrode116 on a transparent substrate 100. Independent of the LED structure, aSchottky diode of the light emitting device comprises a second nucleusgeneration layer 102 b and a second conductive buffer layer 104 b formedon the transparent substrate 100, and a Schottky contact electrode 118and an ohmic contact electrode 120 formed on the second conductivebuffer layer 104 b.

The transparent electrode 114 of the LED structure is connected to theohmic contact electrode 120, and the n-side electrode 116 of the LEDstructure is connected to the Schottky contact electrode 118. As aresult, as shown in FIG. 1 b, the light emitting device has a structurewherein the LED is connected to the Schottky diode in parallel. In thelight emitting device constructed as described above, when a highreverse voltage, for example, a reverse ESD voltage is instantaneouslyapplied thereto, the high voltage can be discharged through the Schottkydiode. Accordingly, most currents flow through the Schottky diode ratherthan the LED, thereby reducing damage of the light emitting device.

However, the method of protecting the light emitting device from ESDusing the Schottky diode has a drawback of complicated manufacturingprocess. In other words, not only a region for LED must be divided froma region for the Schottky diode, but also it is necessary to deposit anadditional electrode material in ohmic contact with an electrodematerial constituting the Schottky diode on the second conductive bufferlayer 104 b comprising n-type GaN-based materials. In particular, thereare problems of limitation in selection of the metallic material formingSchottky contact between the n-type GaN-based materials, and ofpossibility of change in contact properties of semiconductor-metal infollowing processes, such as heat treatment.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above problems, andit is an object of the present invention to provide a galliumnitride-based light emitting device, which has two or moremetal-insulator-metal (MIM) type tunnel junctions on an n-type cladlayer in a region separated from a region for an n-side electrode,thereby remarkably enhancing tolerance to reverse ESD, and a method formanufacturing the same.

In accordance with one aspect of the present invention, the above andother objects can be accomplished by the provision of a galliumnitride-based light emitting device comprising an n-type GaN-based cladlayer, an active layer, a p-type GaN-based clad layer and a p-sideelectrode sequentially stacked on a substrate, the light emitting devicefurther comprising: an n-side electrode formed on one region of then-type GaN-based clad layer; and two or more MIM type tunnel junctionsformed on the other regions of the n-type GaN-based clad layer andelectrically connected to the n-side electrode while being spaced fromthe n-side electrode. Each of the MIM type tunnel junctions may comprisea lower metal layer formed on the GaN-based clad layer so as to contactthe n-type GaN-based clad layer, an insulating film formed on the lowermetal layer, and an upper metal layer formed on the insulating film. Theupper metal layer may have a multilayer structure comprising two or morelayers. The lower metal layer may comprise the same material as that ofthe n-side electrode.

When a reverse ESD voltage is applied to the light emitting device, theMIM type tunnel junctions allow tunneling of electrons therethrough.Thus, the light emitting device of the invention is prevented from beingdamaged by the reverse ESD voltage.

The light emitting device of the invention may further comprise atransparent electrode layer between the p-type GaN-based clad layer andthe p-side electrode. In this case, the transparent electrode layer mayextend to an upper surface of the insulating film, and constitute atleast a portion of the upper metal layer. The upper metal layer maycomprise a metal layer formed on the transparent electrode layer andcomposed of the same material as that of the p-side electrode. In thiscase, the upper metal layer of the MIM type tunnel junction constitutesa multilayer structure of transparent electrode layer/metal layer.

The upper electrode layer of the MIM type tunnel junction may comprisethe same material as that of the p-side electrode. In this case, thelower electrode layer may comprise the same material as that of then-side electrode, and the transparent electrode may be formed betweenthe p-type GaN-based clad layer and the p-side electrode. Accordingly,each of the MIM type tunnel junctions may comprise the lower metal layercomprising the same material as that of the n-side electrode, theinsulating film formed on the lower metal layer, and the upper metallayer formed on the insulating film and comprising the same material asthat of the p-side electrode.

The two or more MIM type tunnel junctions may be spaced the samedistance from the p-side electrode. In this manner, the MIM type tunneljunctions are spaced the same distance from the p-side electrode,thereby allowing a voltage applied to the n-side electrode to be furtherlowered upon application of an ESD voltage.

The p-side electrode may comprise at least one selected from the groupconsisting of Ti, Au, Ni, an alloy of Au and Al, an alloy of Au and Ti,an alloy of Au and Cu, a Mn-based alloy, a La-based alloy, a Ni-basedalloy, and a Mg-based alloy. For example, the p-side electrode maycomprise MnNi, LaNi₅, MgNi, ZnNi or ZnMg. The n-side electrode maycomprise at least one selected from the group consisting of Cr, Ti, Ni,Au, Al, Ta, Hf, AuGe alloy, ZnO, and ITO. The transparent electrodelayer may comprise at least one selected from the group consisting ofITO, SnO₂, Double layers of Ni/Au, an alloy of Ni and Au, ZnO, and MgO.

The insulating film of the MIM type tunnel junction may comprise oneselected from the group consisting of silicon oxide, aluminum oxide,titanium oxide, silicon nitride and polyimide. The insulating film mayhave a thickness of 10 to 3,000 Å. Preferably, the insulating film mayhave a thickness of 100 to 1,000 Å.

In accordance with another aspect of the invention, there is provided amethod for manufacturing a gallium nitride-based light emitting device,comprising the steps of: sequentially forming an n-type GaN-based cladlayer, an active layer and a p-type GaN-based clad layer on a substrate;exposing a portion of the n-type GaN-based clad layer by mesa-etchingsome portion of the p-type GaN-based clad layer, active layer and n-typeGaN-based clad layer; forming an n-side electrode on one region of theexposed n-type GaN-based clad layer; forming two or more lower metallayers on the other regions of the exposed GaN-based clad layer so as tobe electrically connected to the n-type GaN-based clad layer while beingseparated from the n-side electrode; forming an insulating film on thelower metal layers; forming an upper metal layer on the insulating film;and forming a p-side electrode on the p-type GaN-based clad layer. Thelower metal layers may comprise the same material as that of the n-sideelectrode. In this case, the step of forming the lower metal layers issimultaneously performed with the step of forming the n-side electrode.

A stack of the lower metal layers, insulating film, and upper metallayer constitutes an MIM type tunnel junction according to theinvention. According to the method of the invention, two or more MIMtype tunnel junctions are formed. The MIM type tunnel junctions of theinvention provide a path for allowing passage of reverse current when areverse ESD voltage is applied to the gallium nitride-based lightemitting device.

The step of forming the upper metal layer on the insulating film maycomprise forming a transparent electrode layer on the insulating filmand the p-type GaN-based clad layer. In this case, the transparentelectrode layer formed on the insulating film constitutes the uppermetal layer or a portion of the upper metal layer.

The step of forming the upper metal layer on the insulating film maycomprise forming a transparent electrode layer on the insulating filmand the p-type GaN-based clad layer, and forming a metal layercomprising the same material as that of the p-side electrode on thetransparent electrode layer in a region of the insulating film. In thiscase, formation of the metal layer comprising the same material as thatof the p-side electrode may be simultaneously performed with the step offorming the p-side electrode. In this manner, the upper metal layerconstitutes a multilayer structure of transparent electrode layer/metallayer.

The step of forming the upper metal layer on the insulating film maycomprise forming a transparent electrode layer on the insulating filmand the p-type GaN-based clad layer, selectively eliminating thetransparent electrode layer so as to expose the insulating film, andforming a metal layer comprising the same material as that of the p-sideelectrode on the exposed insulating film. In this case, formation of themetal layer comprising the same material as that of the p-side electrodemay be simultaneously performed with the step of forming the p-sideelectrode. In this manner, the metal layer comprising the same materialas that of the p-side electrode constitutes the upper metal layer of theMIM type tunnel junction.

The method may further comprise forming a passivation film forprotecting the gallium nitride-based light emitting device. In thiscase, the step of forming the passivation film may be performedsimultaneously with the step of forming the insulating film.

The present invention provides the gallium nitride-based light emittingdevice having high tolerance to reverse ESD. In order to enhancetolerance to reverse ESD, the two or more MIM type tunnel junctions areformed at locations spaced from the n-side electrode on the n-typeGaN-based clad layer. Each of the MIM type tunnel junctions has amultilayer structure of metal-insulator-metal, and allows reversecurrent to pass therethrough when a reverse ESD voltage is applied tothe gallium nitride-based light emitting device. As a result, eventhough the reverse ESD voltage is applied thereto, the light emittingdevice is prevented from being damaged, thereby enhancing reliability ofthe device.

Additionally, according to the invention, the material for the n-sideelectrode, transparent electrode layer, the p-side electrode andpassivation film of the light emitting device can be used as thematerial for the lower metal layers, the upper layer and the insulatingfilm constituting the MIM type tunnel junctions without using othermaterials, thereby reducing the manufacturing costs. The light emittingdevice of the invention is a compound semiconductor light emittingdevice, and is formed of a GaN-based material. Here, the term “GaN-basedmaterial” means a material having the formula Al_(x)Ga_(y)In_(z)N(0≦x≦1, 0≦y≦1, 0≦z≦1).

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 a is a cross-sectional view illustrating a conventional galliumnitride-based light emitting device having a Schottky diode connected inparallel;

FIG. 1 b is an equivalent circuit diagram of FIG. 1;

FIG. 2 is a plan view schematically illustrating a GaN-based lightemitting device according to one preferred embodiment of the presentinvention;

FIG. 3 are cross-sectional views taken along lines X-X′ and Y-Y′ of FIG.2;

FIG. 4 is a cross-sectional view illustrating a GaN-based light emittingdevice according to another embodiment of the present invention;

FIG. 5 is a cross-sectional view illustrating a GaN-based light emittingdevice according to yet another embodiment of the present invention;

FIGS. 6 to 11 are cross-sectional views illustrating a method formanufacturing a GaN-based light emitting device according to embodimentof the present invention; and

FIGS. 12 and 13 are cross-sectional views illustrating a method formanufacturing a GaN-based light emitting device according to anotherembodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments will now be described in detail with reference tothe accompanying drawings. It should be noted that the embodiments ofthe invention can be modified in various shapes, and that the presentinvention is not limited to the embodiments described herein. Theembodiments of the invention are described so as to enable those havingan ordinary knowledge in the art to have a perfect understanding of theinvention. Accordingly, shape and size of components of the inventionare enlarged in the drawings for clear description of the invention.Like components are indicated by the same reference numerals throughoutthe drawings.

FIG. 2 is a plan view schematically illustrating a gallium nitride-basedlight emitting device 300 according to one embodiment of the invention,and FIG. 3 is cross-sectional views taken along lines X-X′ and Y-Y′ ofFIG. 2. Referring to FIGS. 2 and 3, the light emitting device 300comprises a buffer layer 102, an n-type GaN layer 103, an n-type AlGaNlayer 104, an active layer 105 having the formula Al_(x)Ga_(y)In_(z)N(0≦x≦1, 0≦y≦1, 0≦z≦1) and a multilayer structure, and a p-type AlGaNlayer 106 sequentially stacked on a substrate 101 such as a sapphiresubstrate. Here, the n-type GaN layer 103 and the n-type AlGaN layer 104constitute an n-type GaN-based clad layer, and the p-type AlGaN layer106 constitutes a p-type GaN layer.

The stack has a mesa structure wherein some portion of the p-type AlGaNlayer 106, active layer 105, n-type AlGaN layer 104 and n-type GaN layer103 are removed to expose a portion of the n-type GaN layer 103. Ann-side electrode 114 b is formed on one region (region B of FIG. 3) ofthe exposed n-type GaN layer 103, and two or more MIM type tunneljunctions 200 are formed on the other regions (region A of FIG. 3) ofthe exposed GaN layer 103 so as to be spaced from the n-side electrode114 b. The two or more MIM type tunnel junctions 200 are electricallyconnected to the n-side electrode 114 b via a wire 114 c. A transparentelectrode layer 110 is formed on the p-type AlGaN layer 106. A p-sideelectrode 112 constituting a pad electrode is formed on one side of thetransparent electrode layer 110. In order to allow easy formation ofohmic contact between the electrodes and the semiconductor material, anadditional ohmic contact layer (not shown) can be formed between thep-type AlGaN layer 106 and the transparent electrode layer 110. Theohmic contact layer may comprise, for example, In₂O₃ and at least one ofZn, Mg and Cu.

As shown in FIGS. 2 and 3, a plurality of MIM type tunnel junctions (inthis embodiment, two MIM type tunnel junctions) are formed on the n-typeGaN layer 103. Each of the MIM type tunnel junctions 200 comprises alower metal layer 114 a, an insulating film 108, and an upper metallayer 110. As a result, the junctions 200 have a metal-insulator-metal(MIM) structure, which is similar to that of a capacitor. However, thejunctions 200 are not formed as the capacitor, and are constructed toallow quantum mechanical tunneling upon instantaneous application ofhigh reverse voltage. That is, when a reverse ESD voltage is applied tothe light emitting device 300, tunneling current flows through the MIMtype tunnel junctions 200, thereby preventing the light emitting devicefrom being damaged by ESD.

According to the present embodiment, the lower metal layer 114 a of eachMIM type tunnel junction 200 is composed of the same material as that ofthe n-side electrode 114 b. Thus, during the manufacturing process, thelower metal layer 114 a and the n-side electrode 114 b are formed at thesame time. Additionally, the lower metal layer 114 a is electricallyconnected to the n-side electrode 114 b via a wire composed of the samematerial. As for a material of the n-side electrode 114 b (thus, thematerial for the lower metal layer 114 a and the wire 114 c), Ti, Ni, Auor an AuGe alloy can be used.

The insulating film 108 of the MIM type tunnel junction 200 is formed onthe lower metal layer 114 a. The insulating film 108 may comprisesilicon oxide, aluminum oxide, titanium oxide, silicon nitride,polyimide, or the like. Since the MIM type tunnel junctions 200 are notused as the capacitor, it is not necessary for the MIM type tunneljunction 200 to have a high dielectric constant. In order to ensuretunneling of electrons through the insulating film 108 upon applicationof reverse ESD voltage, the insulating film preferably has a thicknessof 10 to 3,000 Å., and more preferably, a thickness of 100 to 1,000 Å.Additionally, the insulating film 108 may be formed simultaneously withformation of a passivation film (not shown) for protecting the lightemitting device, and at this time, the insulating film 108 may comprisethe same material as that of the passivation film.

The upper layer of the MIM type tunnel junction 200 may be constitutedby the transparent electrode layer 110 formed on the insulating film108. The transparent film 110 is also formed on the p-type AlGaN layer106, thus constituting the transparent electrode of the LED, and extendsto an upper surface of the insulating film, constituting the upper metallayer of the MIM type tunnel junction 200. Thus, during themanufacturing process, the upper metal layer for realizing the MIM typetunnel junction and the transparent electrode layer for realizing theLED can be formed at the same time. The transparent electrode layer 110may comprise ITO, SnO₂, double layers of Ni/Au, or an alloy of Ni andAu. Thus, the upper metal layer 200 of the MIM type tunnel junction isalso composed of any one of these materials. Preferably, the pluralityof MIM type tunnel junctions 200 are, as shown in FIG. 2, spaced thesame distance from the p-side electrode 112, respectively. In thismanner, as the plurality of MIM type tunnel junctions 200 are spaced thesame distance from the p-side electrode 112, respectively, a voltageapplied to the n-side electrode can be further lowered.

According to the present embodiment, the MIM type tunnel junctions 200cause most of current to flow therethrough when an instantaneous reverseESD voltage pulse is generated. Thus, the gallium nitride-based lightemitting device is prevented from being damaged. In particular, the twoor more MIM type tunnel junctions 200 are located at two or morelocations spaced the same distance from the n-side electrode 114 b,thereby allowing effective discharge through the MIM type tunneljunctions 200 upon application of the reverse ESD voltage. Moreover,since the lower metal layer 114 a, insulating film 108 and upper metallayer 110 of each MIM type tunnel junction 200 can comprise the samematerial as that of the n-side electrode, passivation film, andtransparent electrode layer for realizing the light emitting device, thelight emitting device of the invention is appropriate for realizing asimple manufacturing process.

FIG. 4 is a cross-sectional view illustrating a gallium nitride-basedlight emitting device according to another embodiment of the invention.The gallium nitride-based light emitting device of FIG. 4 is the same asthat of FIG. 3, except that it has a metal layer 112 a formed on thetransparent electrode layer 110. Thus, in the present embodiment, eachof the MIM type tunnel junctions 202 has a stacked structure comprisinglower metal layer 114 a/insulating film 108/transparent electrode film110/metal layer 112 a. At this time, an upper metal layer of the MIMtype tunnel junction 202 has a multilayer structure comprising thetransparent electrode film 110/metal layer 112 a. Additionally, themetal layer 112 formed on the transparent electrode film 110 is composedof the same material as that of the p-side electrode 112. Thus, themetal layer 112 a is also formed simultaneously with the p-sideelectrode 112.

FIG. 5 is a cross-sectional view illustrating a gallium nitride-basedlight emitting device according to yet another embodiment of theinvention. The gallium nitride-based light emitting device of FIG. 5 isthe same as that of FIG. 3, except that it has a metal layer 112 acomposed of the same material as that of the p-side electrode 112 andformed directly on the insulating film 108 of each MIM type tunneljunction 201. Thus, in the present embodiment, the MIM type tunneljunctions 201 do not comprise the transparent electrode film 110, andonly the metal layer 112 a composed of the same material as that of thep-side electrode 112 constitutes the upper metal layer of the MIM typetunnel junctions 201. The metal layer 112 a can also be formedsimultaneously with the p-side electrode 112. The MIM type tunneljunctions 201 can be formed by selectively removing the transparentelectrode layer 110, as described below.

A method for manufacturing a gallium nitride-based light emitting deviceaccording to various embodiments of the invention will now be described.FIGS. 6 to 11 are cross-sectional views illustrating the method formanufacturing the gallium nitride-based light emitting device.

First, referring to FIG. 6, a buffer layer 102 is formed on a substrate101, such as a sapphire substrate. The buffer layer 102 is formed torelieve lattice mismatch between the substrate and a GaN-basedsemiconductor, and can be formed of, for example, a GaN layer grown atlower temperature. An n-type GaN layer 103, an n-type AlGaN layer 104,an active layer 105, and a p-type AlGaN layer 106 are sequentiallyformed on the substrate 101. Here, the active layer 105 can be formed soas to form a stacked structure of a GaN layer and an InGaN layer, andconstitute a multi-quantum well. The n-type AlGaN layer 104 may have adoping concentration of, for example, 10 ¹⁵ to l²²/cm³.

Then, a mesa structure as shown in FIG. 7 is achieved by mesa etchingthe stacked structure shown in FIG. 6. That is, a portion of the n-typeGaN layer 103 is exposed by mesa etching some portion of the p-typeAlGaN layer 106, active layer 105, n-type AlGaN layer 104 and n-type GaNlayer 103. As a result, as shown in FIG. 7, a portion of the n-type GaNlayer 103 is exposed on one region (region A) where a MIM type tunneljunction will be formed, and on another region (region B) where then-side electrode will be formed. At this time, the n-type GaN layer 103and the n-type AlGaN layer 104 constitute an n-type GaN-based clad layerof the light emitting device, and the p-type AlGaN layer 106 constitutesa p-type GaN layer thereof.

Then, as shown in FIG. 8, an alloy layer of, for example, AuGe is formedon the exposed on the regions A and B of the exposed n-type GaN layer.Accordingly, a lower metal layer 114 a of the MIM type tunnel junctionis formed on the region A, and an n-side electrode 114 b of the lightemitting device is formed on the region B. The lower metal layer 114 aand the n-side electrode 114 b composed of the same material are spacedfrom each other, as described with reference to FIG. 2, and electricallyconnected to each other via a wire 114 c (see FIG. 2) composed of thesame material (AuGe alloy) as that of the lower metal layer 114 a andthe n-side electrode 114 b. Then, an insulating film 108 of SiO₂ isformed to a thickness of 1,000 Å on the lower metal layer 114 a.Although not shown in the drawings, the insulating film 108 may beformed simultaneously with formation of a passivation film forprotecting the light emitting device. In this case, the insulating film108 may comprise the same material as that of the passivation film.

Then, as shown in FIG. 9, a transparent electrode layer 110 comprising,for example, ITO is formed on the p-type AlGaN layer 106, and theinsulating film 108. The transparent electrode layer 110 acts as atransparent electrode of a light emitting diode structure on the p-typeAlGaN layer 106, and acts as an upper metal layer of the MIM type tunneljunction on the insulating film 108. Thus, as shown in FIG. 9, the MIMtype tunnel junction comprising AuGe layer/SiO₂ layer/ITO layer isformed at a location (region A) spaced from the n-side electrode 114 b.

Finally, as shown in FIG. 10, a p-side electrode 112 composed of, forexample, a Ti layer, is formed at one side on the transparent film 110where the p-type AlGaN layer 106 is formed. As a result, the galliumnitride-based light emitting device according to the present embodimentis provided. When a normal forward voltage is applied thereto, normalcurrent flows through the GaN semiconductor materials 103 to 106 in anLED structure (cross section Y-Y′ of FIG. 10) of the light emittingdevice. Since current does not flow through the insulating film 108 in anormal operating current region, the MIM type tunnel junction acts as akind of current blocking layer. On the contrary, if a reverse ESDvoltage is applied thereto, most of the current flows through the MIMtype tunnel junction formed in the light emitting device. In otherwords, upon application of the reverse ESD voltage, the electrons tunnelthrough the insulating film 108, and flow directly from the lower metallayer 114 a to the upper metal layer (that is, the transparent electrodelayer 110). Accordingly, the light emitting device can be protected fromthe reverse ESD voltage.

An additional metal layer may be formed on the transparent electrodelayer 110 in the region A where the MIM type tunnel junction is formed.FIG. 11 shows a metal layer 112 a formed on the transparent electrodelayer 110 and composed of the same material as that of the p-sideelectrode. Specifically, after performing the process described withreference to FIGS. 6 to 9, the metal layer 112 a comprising Ti is formedtogether with the p-side electrode 112 comprising Ti on the transparentelectrode layer 110. Thus, an upper metal layer of the MIM type tunneljunction has a multilayer structure of the transparent electrode layer110 comprising ITO and the metal layer 112 a comprising Ti.

FIGS. 12 and 13 are cross-sectional views illustrating a method formanufacturing a gallium nitride-based light emitting device according toanother embodiment. In the method of the present embodiment, theprocesses described in FIGS. 1 to 9 are also initially performed. Then,as shown in FIG. 12, the transparent electrode layer 110 is selectivelyetched such that it is removed only from the region A. As a result, theinsulating film 108 is exposed in the region A.

Then, as shown in FIG. 12, a p-side electrode comprising Ti is formed atone side of the transparent electrode layer 110, and at the same time, ametal layer 112 a comprising Ti is formed on the exposed insulating film108. As a result, the lower metal layer 114 a comprising AuGe, theinsulating film 108 comprising SiO₂, and the upper metal layer 112 acomprising Ti constitute the MIM type tunnel junction.

As apparent from the above description, according to the presentinvention, an MIM type tunnel junction is directly formed in the galliumnitride-based light emitting device, thereby protecting the lightemitting device from reverse ESD voltage. As a result, endurance againstthe reverse ESD voltage is enhanced, thereby improving reliability ofthe device. In particular, two or more MIM type tunnel junctions areformed at locations spaced from the n-side electrode, thereby allowingeffective discharge therethrough upon application of the reverse ESDvoltage. Moreover, the lower metal layer, insulating film and uppermetal layer of the MIM type tunnel junction can comprise the samematerial as that of the n-side electrode, passivation film andtransparent electrode layer for realizing the light emitting device, asimple manufacturing process can be realized.

It should be understood that the embodiments and the accompanyingdrawings have been described for illustrative purposes and the presentinvention is limited only by the following claims. Further, thoseskilled in the art will appreciate that various modifications, additionsand substitutions are allowed without departing from the scope andspirit of the invention as set forth in the accompanying claims.

1-14. (canceled)
 15. A method for manufacturing a gallium nitride-basedlight emitting device, comprising the steps of: sequentially forming ann-type GaN-based clad layer, an active layer and a p-type GaN-based cladlayer on a substrate; exposing a portion of the n-type GaN-based cladlayer by mesa-etching some portion of the p-type GaN-based clad layer,active layer and n-type GaN-based clad layer; forming an n-sideelectrode on one region of the exposed n-type GaN-based clad layer;forming two or more lower metal layers on the other regions of theexposed GaN-based clad layer so as to be electrically connected to then-type GaN-based clad layer while being separated from the n-sideelectrode; forming an insulating film on the lower metal layers; formingan upper metal layer on the insulating film; and forming a p-sideelectrode on the p-type GaN-based clad layer.
 16. The method as setforth in claim 15, wherein the lower metal layers comprises the samematerial as that of the n-side electrode, and the step of forming thelower metal layers is simultaneously performed with the step of formingthe n-side electrode.
 17. The method as set forth in claim 16, whereinthe step of forming the upper metal layer on the insulating filmcomprises forming a transparent electrode layer on the insulating filmand the p-type GaN-based clad layer.
 18. The method as set forth inclaim 17, wherein the step of forming the upper metal layer on theinsulating film further comprises: forming a metal layer on thetransparent electrode layer in a region of the insulating film andcomprising the same material as that of the p-side electrode, andwherein formation of the metal layer comprising the same material asthat of the p-side electrode is simultaneously performed with the stepof forming the p-side electrode.
 19. The method as set forth in claim16, wherein the step of forming the upper metal layer on the insulatingfilm comprises: forming a transparent electrode layer on the insulatingfilm and the p-type GaN-based clad layer; selectively eliminating thetransparent electrode layer so as to expose the insulating film; andforming a metal layer comprising the same material as that of the p-sideelectrode on the exposed insulating film, and wherein formation of themetal layer comprising the same material as that of the p-side electrodeis simultaneously performed with the step of forming the p-sideelectrode.
 20. The method as set forth in claim 15, further comprising:forming a passivation film for protecting the gallium nitride-basedlight emitting device, wherein formation of the passivation film isperformed simultaneously with the step of forming the insulating film.